PLD: Pulsed Laser Deposition
Description: A method of growing thin films by evaporating a solid target under vacuum via a laser pulse
Recommended Product: Quantel Brilliant B
Principle
- Under vacuum or active gas
- Laser-target interaction
=> Creation of a plasma (= laser breakdown) - Transport of the material in gaseous phase
- Deposition and growth on the substrate
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2005 Courtesy of Dr. Iwata AIST - Ibaragi - Japan |
Critical parameters
- Target properties
- Absorption is a function of the wavelength, the crystallographic lattice, the degree of surface oxidation…
- Laser properties
- UV wavelength :266/355nm or less (excimer lasers)
- Pulse duration: 10ns or less (ps, fs=>many worldwide publications mentioning clusters and droplets in that regime)
- Rep. Rate: Typ. 10Hz or more with Nd:YAG lasers
- Intensity: 100-500MW/cm²
Advantages of the method
- Crystalline thin film formation (PLD on heated substrates)
- Textured films with a low density of defects
- Sequential growth:
- growth (pulse)/annealing/growth (pulse)/annealing …
- Epitaxial growth on single crystal substrates
- epitaxial growth of domains
- well defined epitaxial relationships
- epitaxial growth despite large lattice mismatch
- Up to 10%!
Applications and perspectives
Study of the correlation between the properties of the films and their structural and microstructural properties)
More recent works : doped oxides
- spintronics ZnO or TiO2 doped with transition metals (Mn, Co, ….)
- optoelectronics wide band gap engineering (ZnO doped with Mg, Cd, ….)
- planar optical amplifiers (Er and Yb doped oxides)
- emissive materials (Eu doped oxides)
- transparent conducting oxides