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The Stanford Research Systems SIM922 Diode Temperature Monitor is designed to measure four sensors simultaneously. Based on the modular SIM platform, they provide high performance, multiple channel capability in a small footprint.
Each of the four channels in the SRS SIM922 has an independent, precision 10 µA current source to provide sensor excitation. Measurement results can be displayed in either kelvins or volts.
The SIM922 employs four-wire measurement circuits (±I excitation leads, ±V sense leads) making the measurements insensitive to series lead resistance.
The four channel excitations are independently controlled and do not switch on or off when the readout is advancing between channels. Sensor excitations can be disabled to reduce power dissipation at sensitive cryogenic stages. This also accelerates readings in the remaining enabled channels. Measurements are performed at rates up to four readings per second.
A factory-standard calibration curve is built in for each model. In addition, each channel has non-volatile memory to store a 256-point custom calibration curve to convert sensor units (V or Ω) to temperature units (K).
|Number of inputs||4||4|
|Sensor type||Silicon diode||Platinum RTD, other RTDs|
|Excitation||4 constant current sources||4 constant current sources|
|10 µA ± 0.01 %,
|1.0 mA ± 0.1 %,
|Input range||0 V to 2.5 V||0 Ω to 1400 Ω|
|Calibration curves||1 standard, 4 user-defined curves, 256 points each||DIN 43760, 4 user-defined curves, 256 points each|
|Temperature range||Sensor dependent,
1.4 K to 475 K (typ.)
20 K to 873 K (typ.)
|Display resolution||4 digits||4 digits|
|Interface resolution||1 µV||1 mΩ|
|Measurement res||1.2 µV rms||1.2 mΩ rms|
|Measurement acc, (23±1) °C||20 µV + 0.01 % of reading||5 mΩ + 0.01 % of reading|
|Temperature coefficient||±5 ppm/°C||±5 ppm/°C|
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