Plan view TEM specimens from a fully fabricated spin-transfer torque magnetic random-access memory (STT-MRAM) device were prepared using a Ga FIB system. Post-FIB concentrated Ar ion beam milling using the Model 1080 PicoMill® TEM specimen preparation system of these plan view TEM specimens allowed controlled thinning and produced artifact-free TEM specimens. FIB plan view specimen preparation followed by concentrated Ar ion beam polishing of the STT-MRAM specimens prevented exposure of the tunnel barrier layer, which can be damaged easily by the Ga FIB when preparing cross-section specimens. MgO thin films comprise the ultra-thin tunnel barrier layer that is sandwiched between a multilayer stack in an MRAM device. In this case, atomic resolution imaging and analysis of the grain boundary structure in the MgO thin film in a plan view TEM specimen required a specimen less than 4 nm in thickness. The integrated electron beam column in the PicoMill system provided real-time imaging during the removal of the Pt capping layer and allowed milling step termination once the tunnel barrier layer was reached.
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Fischione Model 1080 PicoMill® TEM Specimen Preparation System
- Achieve ultimate specimen quality – free from amorphous and implanted layers
- Complements FIB technology
- Milling without introduction of artifacts
- Advanced detector technology for imaging and precise endpoint detection
- In situ imaging with ions and electrons
- Microscope connectivity for risk-free specimen handling
- Adds capability and capacity
- Fast, reliable and easy to use