IntraAction GE Series High Power Acousto-Optic Modulator Driver
Electronics designed to drive a high power IntraAction acousto-optic modulator. 30 nsec rise time.
The IntracAction Model GE series high power acousto-optic modulator drivers include a crystal-controlled RF oscillator, fast modulation circuit, and a broadband RF power amplifier in a housing with power supply, RFI line filter, line switch, and fault/interlock circuit. The standard crystal controlled oscillator has a calibration tolerance of 25 ppm. Crystals at other than the specified frequencies can be factory installed. The standard modulation input configuration is analogue with a digital input option available.
A CW RF output level is adjusted by the front panel level control which inserts a dc offset to the input of the modulation circuit with no modulation input voltage. The class AB broadband amplifier has sufficient bandwidth for pulsed operation. RF output power capability can be up to 100 watts for some models. Configuration options include a front panel user-accessible connection between the oscillator and modulation circuit (H) so that an external source frequency can be used in place of the internal crystal oscillator.
Also available is an optional front panel connection between the modulation circuit and the RF power amplifier (N) to give the Model GE drivers capability to be used as a stand-alone RF power amplifier. The fault/interlock circuit will latch the power supply off when an open circuit condition is present and can be connected to the thermal switch of a Germanium infrared modulator or in a normally closed system interlock circuit.
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SPECIFICATIONS |
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Crystal Oscillator Stability |
30 ppm |
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Input Configuration |
Analog (0-1 volt for 0-maximum RF power) |
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RF Amplifier Operation |
Class AB |
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Rise/Fall Time |
30 ns |
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Harmonics (at full power) |
-20 dBc |
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Output Mismatch Tolerance |
100% |
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Input / Output Impedance |
50 ohms |
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Interlock Input Conditions |
Shorted (power supply operational) |
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Open (power supply latched off) |
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Line Voltage (standard) |
115/230 Vac, 50-60 Hz (100 Vac, option J) |
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Size (inches)(cm) |
5.7(14.5) W x 4.5(11.5) H x 16.0(40.7) D |
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MODEL |
GE-4030 |
GE-6030 |
GE-8030 |
GE-9020 |
GE-11020 |
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Oscillator Frequency1 |
40 MHz |
60 MHz |
80 MHz |
90 MHz |
110 MHz |
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RF Output Power2 |
30 Watts |
30 Watts |
30 Watts |
20 Watts |
20 Watts |
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OPTIONS:
D Inverse digital, input<0.8 volts for RF/on, input>2 volts to 5 volts for RF off, 50 ohm input impedance.
E Low level oscillator RF output, +10 dBm level.
H Front panel access between modulator circuit and RF power amplifier.
J 100 Vac line voltage for Japan.
N Front panel access between oscillator and modulator circuit.
P Internal pulse generator for q-switch applications with triggered, gated, and free running capability.
T Digital input, input<0.8 volts for RF/off, input>2 volts to 5 volts for RF/on, 50 ohm input impedance.
T7 Same as option T, but with 70 dB extinction ratio.
-6 Analog input plus option T (analog + digital), total extinction ratio is 70 dB.
1Other frequencies available.
2Other RF output power levels available.
OEM drivers available - please contact us with your requirements
MODEL GE SERIES Datasheet 
